High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

ABSTRACT

Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

REFERENCE TO RELATED APPLICATIONS

This Application is a Continuation of U.S. application Ser. No.15/964,636, filed on Apr. 27, 2018, which claims the benefit of U.S.Provisional Application No. 62/564,695, filed on Sep. 28, 2017. Thecontents of the above-referenced Patent Applications are herebyincorporated by reference in their entirety.

BACKGROUND

Ultrahigh voltage metal-oxide-semiconductor (MOS) devices aresemiconductor devices that can sustain operation at voltages of severalhundred volts, such as, for example, voltages around 600 volts. Amongother things, ultrahigh voltage MOS devices are used for level shiftersin high-side gate driver circuits. Such a level shifter translates aninput signal at a first voltage level to an output signal at a secondvoltage level to resolve incompatibility between devices thatrespectively operate at the first and second voltage levels.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a top layout of some embodiments of an integratedcircuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS)device is integrated with a high voltage junction termination (HVJT)device.

FIGS. 2A and 2B illustrate various cross-sectional views of some moredetailed embodiments of the IC of FIG. 1.

FIGS. 3A and 3B illustrate various top layouts of some more detailedembodiments of the IC of FIG. 1.

FIGS. 4A and 4B illustrate top layouts of various other embodiments ofthe IC of FIG. 1 in which a geometry of a high side area is varied.

FIGS. 5A-5D illustrate top layouts of various embodiments of the IC ofFIG. 1 in which a geometry of the HVMOS device is varied.

FIGS. 6A and 6B illustrate top layouts of various other embodiments ofthe IC of FIG. 1 in which more than two HVMOS devices are integratedwith the HVJT device.

FIG. 7 illustrates a block diagram of some embodiments a circuit inwhich the IC of FIG. 1 finds application.

FIGS. 8-13 illustrate a series of cross-sectional views of someembodiments of a method for forming an IC in which a HVMOS device isintegrated with a HVJT device.

FIG. 14 illustrates a flowchart of some embodiments of the method ofFIGS. 8-13.

FIG. 15 illustrates a cross-sectional view of some alternativeembodiments of the IC of FIG. 2A.

DETAILED DESCRIPTION

The present disclosure provides many different embodiments, or examples,for implementing different features of this disclosure. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

An integrated circuit (IC) may, for example, comprise a high side areaand a low voltage area. The high side area includes devices that operateat a high voltage level, and the low voltage area includes devices thatoperate at a comparatively low voltage level. A high voltage junctiontermination (HVJT) device has a ring-shaped top layout that surroundsand demarcates the high side area. Further, the HVJT device separatesthe high side area from the low voltage area and a high voltagemetal-oxide-semiconductor (HVMOS) device. The HVMOS device partially orwholly defines a level shifter translating an input signal at the lowvoltage level to an output signal at the high voltage level. Further,the HVMOS device is electrically coupled to a device in the high sidearea to provide the output signal to the device. Such electricalcoupling may, for example, be performed externally by wire bonding, orinternally by metal wires of a back-end-of-line (BEOL) interconnectstructure.

A challenge with using wire bonding to externally electrically couplethe HVMOS device to the device in the high side area is that wirebonding has high process costs and low reliability in extremeenvironments (e.g., environments with high pressure and/or hightemperature). A challenge with using metal wires of a BEOL interconnectstructure to internally electrically couple the HVMOS device to thedevice in the high side area is that the metal wires depend upon anopening in the HVJT device. This leads to reliability issues (e.g., alow breakdown voltage), limits the number of HVMOS devices, andincreases complexity.

In view of the foregoing, various embodiments of the present applicationare directed towards an IC in which an HVMOS device is integrated with aHVJT device. In some embodiments, a first drift well and a second driftwell are in a substrate. The first and second drift wells border in aring-shaped pattern and have a first doping type. The ring-shapedpattern may be circular ring shaped, square ring shaped, rectangularring shaped, triangular ring shaped, or some other closed path shape. Aperipheral well is in the substrate and has a second doping typeopposite the first doping type. The peripheral well surrounds andseparates the first and second drift wells. A body well is in thesubstrate and has the second doping type. Further, the body welloverlies the first drift well and is spaced from the peripheral well bythe first drift well. A gate electrode overlies a junction between thefirst drift well and the body well. The first drift well, the body well,and the gate electrode partially define the HVMOS device, and the seconddrift well and the peripheral well partially defined the HVJT device. Ahigh side well is in the substrate and has the second doping type.Further, the high side well overlies the second drift well and is spacedfrom the peripheral well by the second drift well.

Integrating the HVMOS device and the HVJT device results in smaller ICchip area and higher reliability. For example, because the HVMOS deviceand the HVJT device are integrated, the two devices share a common ICchip area instead of separate IC chip areas. This leads to a reductionin overall IC chip area (e.g., about a 25-60% reduction). As anotherexample, because the HVMOS device and the HVJT device are integrated,the HVMOS device and the HVJT device may be electrically coupled withoutwire bonding and without an opening in the HVJT device. This leads toenhanced reliability.

By surrounding and separating the first and second drift wells, theperipheral well may define an isolation ring separating the HVMOS devicefrom the HVJT device. The isolation ring may be circular ring shaped,square ring shaped, rectangular ring shaped, triangular ring shaped, orsome other closed path shape. The isolation ring facilitates efficientintegration of the HVMOS device with the HVJT device without increasedIC chip area. The efficient integration allows the number of HVMOSdevice to be increased and/or the size of the high side well to beincreased without complex redesigns and increased IC chip area by theHVJT and HVMOS devices. Further, the efficient integration allows avoltage handling capability and/or a current handling capability of theHVMOS device to be varied without complex redesigns.

With reference to FIG. 1, a top layout 100 of some embodiments of an ICin which HVMOS devices 102 are integrated with a HVJT device 104 isprovided. The HVMOS devices 102 and the HVJT device 104 border andcollectively define a composite structure. The composite structureextends laterally in a closed path along a boundary of a high side area106 of the IC to completely surround the high side area 106. In someembodiments, the composite structure is square ring shaped, rectangularring shaped, triangular ring shaped, circular ring shaped, or some otherclosed path shape. Further, the composite structure is surrounded by alow voltage area 108 of the IC.

The high side area 106 accommodates semiconductor devices (not shown)operating at a high voltage level, whereas the low voltage area 108accommodates semiconductor devices (not shown) operating at a lowvoltage level. The high voltage level is high relative to the lowvoltage level and may be or comprise, for example, voltages betweenabout 300-1200 volts, voltages between about 300-750 volts, voltagesbetween about 750-1200 volts, or voltages in excess of about 300 volts.The low voltage level may be or comprise, for example, voltages betweenabout 1-20 volts, voltages between about 1-10 volts, voltages betweenabout 10-20 volts, or voltages less than about 20 volts.

The HVJT device 104 physically and electrically separates the high sidearea 106 from the low voltage area 108. Further, the HVJT device 104 isor comprises a diode. The diode is capable of sustained operation at thehigh voltage level and is configured to operate in a reverse biasedstate. The HVMOS devices 102 are transistors or some other switchingdevices capable of sustained operation at the high voltage level. Forexample, the HVMOS devices 102 may be laterally diffusedmetal-oxide-semiconductor (LDMOS) devices or some other suitablemetal-oxide-semiconductor (MOS) devices, and/or may sustain operationwhile source-drain voltages are at the high voltage level (e.g., about600 volts). In some embodiments, the HVMOS devices 102 partially orwholly define a level shifter translating an input signal at the lowvoltage level to an output signal at the high voltage level. The HVMOSdevices 102 comprise a first HVMOS device 102A and a second HVMOS device102B.

Each of the HVMOS devices 102 is on an HVMOS drift well 110 and an HVMOSbody well 112, and comprises a first source/drain region 114, a secondsource/drain region 116, a body contact region 118, and a gate electrode120. The HVMOS drift well 110 is a semiconductor region with a firstdoping type and surrounds the HVMOS body well 112. The HVMOS body well112 is a semiconductor region with a second doping type, opposite thefirst doping type, and defines a selectively-conductive channel 122 ofthe HVMOS device. The first doping type may, for example, be n-type, andthe second doping type may, for example, be p-type, or vice versa.Further, the HVMOS body well 112 underlies the first source/drain region114 and the body contact region 118 when viewed in cross-section (notvisible within the top layout 100 of FIG. 1).

The first and second source/drain regions 114, 116 are spaced by theHVMOS drift and body wells 110, 112, such that the first source/drainregion 114 borders the low voltage area 108 and the second source/drainregion 116 borders the high side area 106. The first and secondsource/drain regions 114, 116 are semiconductor regions with the firstdoping type and higher doping concentrations than the HVMOS drift well110. The body contact region 118 is a semiconductor region with thesecond doping type and a higher doping concentration than the HVMOS bodywell 112. The gate electrode 120 (shown in phantom) overlies the HVMOSbody well 112, such that the gate electrode 120 borders the firstsource/drain region 114 and is mostly between the first and secondsource/drain regions 114, 116. The gate electrode 120 may be orcomprise, for example, doped polysilicon, metal, or some otherconductive material.

The HVMOS devices 102 are individually surrounded by isolation rings 124physically and electrically separating the HVMOS devices 102 from thehigh side area 106 and the HVJT device 104. For example, the isolationrings 124 may define diodes with a drift region of the HVJT device 104(discussed hereafter) and/or the HVMOS drift wells 110, and the diodesmay operate in the blocking or reversed biased state to provideelectrical separation. While the isolation rings 124 may be circularring shaped, the isolation rings 124 are not limited to being circularring shaped. The isolation rings 124 may, for example, be square ringshaped, rectangular ring shaped, triangular ring shaped, or some otherclosed path shape. In some embodiments, the isolation rings 124 aresemiconductor regions with an opposite doping type as the HVMOS driftwells 110, and/or the same doping type as the HVMOS body well 112. Theisolation rings 124 facilitate efficient integration of the HVMOSdevices 102 with the HVJT device 104 without increased IC chip area.

As seen hereafter, the integration allows the number of HVMOS devices tobe increased and/or the size of the high side area 106 to be increasedwithout complex redesigns and without the HVMOS and HVJT devices 102,104 using more IC chip area. Further, the integration allows voltagehandling capabilities and/or current handling capabilities of the HVMOSdevices 102 to be varied without complex redesigns. Further yet, theintegration leads to low IC chip area and high reliability. For example,because the HVMOS devices 102 and the HVJT device 104 are integrated,the HVMOS and HVJT devices 102, 104 share a common IC chip area insteadof separate IC chip areas. This leads to a reduction in overall IC chiparea. As another example, because the HVMOS devices 102 and the HVJTdevice 104 are integrated, the HVMOS and HVJT devices 102, 104 may beelectrically coupled without wire bonding and without an opening in theHVJT device 104. This leads to enhanced reliability.

While the IC is illustrated as having two HVMOS devices (i.e., the firstHVMOS device 102A and the second HVMOS device 102B) in FIG. 1, the firstor the second HVMOS device 102A, 102B may be omitted in otherembodiments. Further, as seen hereafter, the IC may have one or moreadditional HVMOS devices in other embodiments. In such embodiments, theone or more additional HVMOS devices are each as described above and areeach positioned along the boundary of the high side area 106.

With reference to FIG. 2A, a cross-sectional view 200A of some moredetailed embodiments of the IC of FIG. 1 is provided. Thecross-sectional view 200A may, for example, be taken along line A-A′ inFIG. 1. As illustrated, the first HVMOS device 102A and the HVJT device104 are on a semiconductor substrate 202. The semiconductor substrate202 may be, for example, a bulk silicon substrate, a group III-Vsubstrate, a silicon-on-insulator (SOI) substrate, or some othersemiconductor substrate.

A peripheral well 204 is in the semiconductor substrate 202 and overliesa bulk semiconductor region 202B of the semiconductor substrate 202. Theperipheral well 204 comprises a pair of segments between which the firstHVMOS device 102A and the HVJT device 104 are sandwiched, and furthercomprises the isolation ring 124. When viewed top down, the isolationring 124 extends laterally along a boundary of the first HVMOS device102A to completely enclose the first HVMOS device 102A. Note this is notvisible within the cross-sectional-sectional view 200A of FIG. 2A. Insome embodiments, the peripheral well 204 has an elevated dopingconcentration at the isolation ring 124 relative to remainder of theperipheral well 204. Further, in some embodiments, the peripheral well204 has the same doping type as the bulk semiconductor region 202B.

An isolation structure 206 overlies the peripheral well 204. Theisolation structure 206 comprises a dielectric material (e.g., siliconoxide), and may be or comprise, for example, a shallow trench isolation(STI) structure, a field oxide (FOX) structure, a local oxidation ofsilicon (LOCOS) structure, or some other isolation structure. Further, afirst peripheral contact region 208A and a second peripheral contactregion 208B overlie the peripheral well 204. The first peripheralcontact region 208A is adjacent to the first HVMOS device 102A, and thesecond peripheral contact region 208B is adjacent to the HVJT device104. The first and second peripheral contact regions 208A, 208B are inthe semiconductor substrate 202 and have the same doping type as, but ahigher doping concentration than, the peripheral well 204. In someembodiments, the first and second peripheral contact regions 208A, 208Bare electrically coupled to ground and/or or a cathode of a low voltagepower supply.

The HVMOS drift well 110 and the HVMOS body well 112 are in thesemiconductor substrate 202 and overlie the bulk semiconductor region202B. Further, the first HVMOS device 102A is on the HVMOS drift well110 and the HVMOS body well 112. The first HVMOS device 102A may be, forexample, an LDMOS transistor or some other switching device. The HVMOSdrift well 110 underlies and laterally surrounds the HVMOS body well112, such that the HVMOS drift well 110 spaces (e.g., completely spaces)the HVMOS body well 112 from the bulk semiconductor region 202B and theperipheral well 204. Further, the HVMOS drift well 110 has an oppositedoping type as the peripheral well 204 and the HVMOS body well 112. TheHVMOS body well 112 has the same doping type as the peripheral well 204.In some embodiments, the isolation structure 206 covers a boundary alongwhich the HVMOS drift well 110 contacts the peripheral well 204.

The second source/drain region 116 overlies the HVMOS drift well 110,closer to the high side area 106 than the first source/drain region 114.The first source/drain region 114 and the body contact region 118overlie the HVMOS body well 112, such that the first source/drain region114 is between the body contact region 118 and the second source/drainregion 116. The first and second source/drain regions 114, 116 arelaterally separated by the HVMOS drift well 110, the HVMOS body well112, and the isolation structure 206. The first source/drain region 114,the second source/drain region 116, and the body contact region 118 arein the semiconductor substrate 202. The first and second source/drainregions 114, 116 have the same doping type as, but a higher dopingconcentration than, the HVMOS drift well 110. The body contact region118 has the same doping type as, but a higher doping concentration than,the HVMOS body well 112. In some embodiments, the first source/drainregion 114 and the body contact region 118 are electrically shortedtogether.

The selectively-conductive channel 122 is in the HVMOS body well 112.The selectively-conductive channel 122 extends along a top surface ofthe semiconductor substrate 202, from the first source/drain region 114to the HVMOS drift well 110. The HVMOS drift well 110 extends from theselectively-conductive channel 122 to the second source/drain region116. Further, the isolation structure 206 overlies the HVMOS drift well110, between the selectively-conductive channel 122 and the secondsource/drain region 116. In some embodiments, a width W of the isolationstructure 206 on the HVMOS drift well 110 is about 50-200 micrometers,about 75-125 micrometers, or about 100 micrometers.

The gate electrode 120 overlies the selectively-conductive channel 122and the isolation structure 206, and further extends along a sidewall ofthe isolation structure 206 from overlying the selectively-conductivechannel 122 to overlying the isolation structure 206. Further, the gateelectrode 120 is electrically insulated from the selectively-conductivechannel 122 by a gate dielectric layer 212. The gate dielectric layer212 may be or comprise, for example, silicon oxide, hafnium oxide, orsome other dielectric material. In some embodiments, an HVMOS fieldplate 214 borders the second source/drain region 116. The HVMOS fieldplate 214 extends along a sidewall of the isolation structure 206 andoverlies the isolation structure 206. In some embodiments, the HVMOSfield plate 214 is electrically shorted to the second source/drainregion 116. The HVMOS field plate 214 may be or comprise, for example,doped polysilicon, metal, or some other conductive material.

During operation of the first HVMOS device 102A, theselectively-conductive channel 122 selectively conducts depending uponwhether a voltage from the gate electrode 120 to the first source/drainregion 114 exceeds a threshold voltage. Further, while the first HVMOSdevice 102A is in the non-conducting or blocking state, the HVMOS driftwell 110 acts as resistor to absorb high electric fields associated withhigh source-drain voltages (e.g., voltages in excess of 300 volts).This, in turn, allows the first HVMOS device 102A to sustain operationat the high source-drain voltages. In some embodiments, the HVMOS driftwell 110 is widened to increase the separation between the HVMOS bodywell 112 and the second source/drain region 116, thereby increasingresistance and voltages at which the first HVMOS device 102A can sustainoperation. In such embodiments, the width W of the isolation structure206 on the HVMOS drift well 110 is increased with the HVMOS drift well110. In some embodiments, the doping concentration of the HVMOS driftwell 110 is reduced, thereby increasing resistance and voltages at whichthe first HVMOS device 102A can sustain operation. A challenge withwidening the HVMOS drift well 110 and/or decreasing the dopingconcentration of the HVMOS drift well 110 is that the resistance of thefirst HVMOS device 102A in the conducting or non-blocking state maybecome high and power efficiency may become low. Further, a challengewith widening the HVMOS drift well 110 is that IC chip area consumed bythe first HVMOS device 102A may become high.

In some embodiments, the HVMOS body well 112 comprises a protrusion 112Pprotruding laterally towards the high side area 106. The protrusion 112Presults in an alternating stack of n-type and p-type semiconductorregions that define an HVMOS reduced surface field (RESURF) structure216 with multiple PN junctions. The multiple PN junctions comprise: 1) afirst PN junction at a boundary between a bottom surface of theprotrusion 112P and the HVMOS drift well 110; and 2) a second PNjunction at a boundary between a top surface of the protrusion 112P andthe HVMOS drift well 110. In some embodiments, the multiple PN junctionsfurther comprise a third PN junction at a boundary between the bulksemiconductor region 202B and the HVMOS drift well 110. The multiple PNjunctions may, for example, also be known as a Super Junction. The HVMOSRESURF structure 216 laterally and vertically distributes the highelectric field associated with high source-drain voltages, such that themaximum electric field is low in the blocking or OFF state. For example,the high electric field may be vertically distributed across themultiple PN junctions, and/or may be laterally distributed from thesecond source/drain region 116 to the HVMOS body well 112. This, inturn, allows the first HVMOS device 102A to sustain operation at highvoltages. Further, the HVMOS RESURF structure 216 does not depend upon ahigh resistance from the second source/drain region 116 to the HVMOSbody well 112, such that IC chip area may be low and the resistance ofthe first HVMOS device 102A n the non-blocking state may be low.

A HVJT drift well 218 overlies the bulk semiconductor region 202B and issandwiched between opposing segments of the peripheral well 204.Further, the HVJT drift well 218 underlies and laterally surrounds ahigh side well 220 at the high side area 106, such that the HVJT driftwell 218 spaces (e.g., completely spaces) the high side well 220 fromthe bulk semiconductor region 202B and the peripheral well 204. The HVJTdrift well 218 and the high side well 220 are in the semiconductorsubstrate 202 and respectively have opposite doping types. In someembodiments, the HVJT drift well 218 has the same doping type as theHVMOS drift well 110, and/or the high side well 220 has the same dopingtype as the HVMOS body well 112 and the peripheral well 204. In someembodiments, the peripheral well 204, the HVMOS body well 112, the highside well 220, and the bulk semiconductor region 202B are p-type,whereas the HVMOS drift well 110 and the HVJT drift well 218 are n-type,or vice versa. In some embodiments, the isolation structure 206partially covers the high side well 220 and/or covers a boundary alongwhich the high side well 220 contacts the HVJT drift well 218.

A high side contact region 222 overlies the high side well 220 andcomprises a pair of segments on opposite sides of the high side well220. In some embodiments, when viewed top down, the high side contactregion 222 extends laterally along a boundary of the high side well 220in a closed path and/or has a ring-shape. Note this is not visiblewithin the cross-sectional-sectional view 200A of FIG. 2A. The high sidecontact region 222 is in the semiconductor substrate 202 and has thesame doping type as, but a higher doping concentration than, the highside well 220.

A HVJT drift contact region 224 overlies the HVJT drift well 218,adjacent to the high side well 220, and comprises a pair of segmentsbetween which the high side well 220 and the high side contact region222 are sandwiched. In some embodiments, when viewed top down, the HVJTdrift contact region 224 extends laterally along a boundary of the highside well 220 in a closed path and/or has a ring-shape. Note this is notvisible within the cross-sectional-sectional view 200A of FIG. 2A. TheHVJT drift contact region 224 is in the semiconductor substrate 202 andhas the same doping type as, but a higher doping concentration than, theHVJT drift well 218.

The HVJT device 104 is or comprises a diode, and is defined in part bythe HVJT drift well 218, the peripheral well 204, the second peripheralcontact region 208B, and the HVJT drift contact region 224. An anode ofthe diode is defined by the second peripheral contact region 208B, and acathode of the diode is defined by the HVJT drift contact region 224, orvice versa. Further, the HVJT drift well 218 and the peripheral well 204define a PN junction of the diode.

The isolation structure 206 overlies the HVJT drift well 218, betweenthe second peripheral contact region 208B and the HVJT drift contactregion 224. Further, in some embodiments, the isolation structure 206has the same width W between the second peripheral contact region 208Band the HVJT drift contact region 224 as between the first and secondsource/drain regions 114, 116. A first HVJT field plate 226 overlies aPN junction at which the HVJT drift well 218 contacts the peripheralwell 204, between the second peripheral contact region 208B and theisolation structure 206. Further, the first HVJT field plate 226 extendsalong a sidewall of the isolation structure 206 from overlying the PNjunction to overlying the isolation structure 206. The first HVJT fieldplate 226 is electrically insulated from the HVJT drift well 218 and theperipheral well 204 by a field plate dielectric layer 228. The fieldplate dielectric layer 228 may be or comprise, for example, siliconoxide, hafnium oxide, or some other dielectric material. In someembodiments, the first HVJT field plate 226 is electrically shorted tothe second peripheral contact region 208B. The first HVJT field plate226 may be or comprise, for example, doped polysilicon, metal, or someother conductive material.

In some embodiments, a second HVJT field plate 230 borders the HVJTdrift contact region 224, between the first HVJT field plate 226 and theHVJT drift contact region 224. The second HVJT field plate 230 extendsalong a sidewall of the isolation structure 206 and overlies theisolation structure 206. In some embodiments, the second HVJT fieldplate 230 is electrically shorted to the HVJT drift contact region 224.The second HVJT field plate 230 may be or comprise, for example, dopedpolysilicon, metal, or some other conductive material.

During operation of the HVJT device 104, the HVJT device 104 provideselectrical separation between the peripheral well 204 and the high sidewell 220 while the high side well 220 is at a higher voltage than theperipheral well 204. Further, while the HVJT device 104 is in thenon-conducting or blocking state, the HVJT drift well 218 and theperipheral well 204 act as resistors between the second peripheralcontact region 208B and the HVJT drift contact region 224 to absorb highelectric fields associated with high voltages (e.g., voltages in excessof 300 volts). This, in turn, allows the HVJT device 104 to sustainoperation at the high voltages. In some embodiments, the HVJT drift well218 is widened to increase the separation between the second peripheralcontact region 208B and the HVJT drift contact region 224, therebyincreasing resistance and voltages at which the HVJT device 104 cansustain operation. In such embodiments, the width W of the isolationstructure 206 on the HVJT drift well 218 is also increased with the HVJTdrift well 218. In some embodiments, the doping concentration of theHVJT drift well 218 is reduced, thereby increasing resistance andvoltages at which the HVJT device 104 can sustain operation. A challengewith widening the HVJT drift well 218 and/or decreasing the dopingconcentration of the HVJT drift well 218 is that the resistance of theHVJT device 104 in the conducting or non-blocking state may become high,and power efficiency may become low. Further, a challenge with wideningthe HVJT drift well 218 is that IC chip area consumed by the HVJT device104 may become high.

In some embodiments, the peripheral well 204 comprises a protrusion 204Pprotruding towards the high side area 106. The protrusion 204P resultsin an alternating stack of n-type and p-type semiconductor regions thatdefine an HVJT RESURF structure 232 with multiple PN junctions. Themultiple PN junctions comprise: 1) a first PN junction at a boundarybetween a bottom surface of the protrusion 204P and the HVJT drift well218; and 2) a second PN junction at a boundary between a top surface ofthe protrusion 204P and the HVJT drift well 218. In some embodiments,the multiple PN junctions further comprise a third PN junction at aboundary between the bulk semiconductor region 202B and the HVJT driftwell 218. The HVJT RESURF structure 232 laterally and verticallydistributes the high electric field associated with high voltages, suchthat the maximum electric field is low in the blocking state. Forexample, the high electric field may be vertically distributed acrossthe multiple PN junctions, and/or may be laterally distributed from thesecond peripheral contact region 208B and the HVJT drift contact region224. This allows the HVJT device 104 to sustain operation at highvoltages. Further, the HVJT RESURF structure 232 does not depend upon ahigh resistance from the second peripheral contact region 208B and theHVJT drift contact region 224, such that IC chip area may be low and theresistance of the HVJT device 104 in the non-blocking state may be low.

The HVJT RESURF structure 232 laterally distributes (e.g., from thesecond peripheral contact region 208B and the HVJT drift contact region224) and vertically distributes (e.g., across the multiple PN junctions)the high electric field associated with high voltages, such that themaximum electric field from the second peripheral contact region 208Band the HVJT drift contact region 224 is low in the blocking state.This, in turn, allows the HVJT device 104 to sustain operation at highvoltages while having a low ON resistance and a low IC chip area.

In some embodiments, a spiral structure 234 overlies the isolationstructure 206 on the HVJT drift well 218 and the HVMOS drift well 110.When viewed top down, the spiral structure 234 extends laterally andcontinuously in a spiral over the isolation structure 206. Note this isnot visible within the cross-sectional-sectional view 200A of FIG. 2A.The spiral structure 234 serves as a field plate to manipulate (e.g.,increase or decrease) carrier mobility thereunder. In some embodiments,a first end of the spiral structure 234 is electrically coupled to thefirst and second peripheral contact regions 208A, 208B and/or ground. Insome embodiments, a second end of the spiral structure, opposite thefirst end, is electrically coupled to the high side contact region 222and/or the HVJT drift contact region 224. The spiral structure 234 maybe or comprise, for example, doped polysilicon, metal, or some otherconductive material.

Conductive wires 236 and conductive vias 238 are stacked over thesemiconductor substrate 202 and define conductive paths. For ease ofillustration, only some of the conductive wires 236 are labeled 236, andonly some of the conductive vias 238 are labeled 238. The conductivepaths provide electrically coupling between the various contact regions(e.g., the HVJT drift contact region 224), the various fields plates(e.g., the first HVJT field plate 226), the gate electrode 120, thefirst and second source/drain regions 114, 116, and the spiral structure234. For example, one of the conductive paths may electrically couplethe first source/drain region 114 to the body contact region 118. Theconductive wires 236 and the conductive vias 238 may be or comprise, forexample, copper, aluminum copper, aluminum, tungsten, some otherconductive material, or any combination of the foregoing.

While FIG. 2A illustrates and describes the first HVMOS device 102A, itis to be understand that the second HVMOS device 102B of FIG. 1 may, forexample, be as the first HVMOS device 102A is illustrated and describedin FIG. 2A. More generally, each HVMOS device described herein may, forexample, be as the first HVMOS device 102A is illustrated and describedin FIG. 2A.

With reference to FIG. 15, a cross-sectional view 1500 of somealternative embodiments of the IC of FIG. 2A is provided in whichconstituents of the IC are varied. For example, the protrusion 204P ofthe peripheral well 204 protrudes to a sidewall directly under the HVJTdrift contact region 224.

With reference to FIG. 2B, a cross-sectional view 200B of some moredetailed embodiments of the IC of FIG. 1 is provided. Thecross-sectional view 200B may, for example, be taken along line B-B′ inFIG. 1. As illustrated, the HVJT device 104 is on opposite sides of thehigh side area 106. Further, the first HVMOS device 102A of FIG. 2A andthe isolation ring 124 of FIG. 2A are not visible (i.e., are outside thecross-sectional view 200B).

With reference to FIG. 3A, a top layout 300A of some more detailedembodiments of the IC of FIG. 1 is provided. The cross-sectional view200A of FIG. 2A may, for example, be taken along line A-A′ in FIG. 3A,and the cross-sectional view 200B of FIG. 2B may, for example, be takenalong line B-B′ in FIG. 3A. In some embodiments, HVMOS drift wells 110of the first and second HVMOS devices 102A, 102B and/or HVMOS body wells112 of the first and second HVMOS devices 102A, 102B may also be knownas switching device wells. In some embodiments, the HVJT drift well 218of the HVJT device 104 may also be known as a termination device well.

As illustrated by FIG. 3A, the high side contact region 222 and the HVJTdrift contact region 224 are ring shaped, and conform to the isolationrings 124 of the first and second HVMOS devices 102A, 102B. In someembodiments, the high side contact region 222 and the HVJT drift contactregion 224 serve as guard rings or pickup rings. In some embodiments,the high side contact region 222 is connected to the lowest voltagelevel in a circuit within which the IC is applied, and the HVJT driftcontact region 224 is connected to highest voltage level in the circuit,to safeguard devices on the high side well 220 (see FIGS. 2A and 2B)against parasitic latching up and turning on. As should be appreciated,while the high side contact region 222 and the HVJT drift contact region224 may be circular ring shaped, the high side contact region 222 andthe HVJT drift contact region 224 are not limited to circular ringshaped and may be square ring shaped, rectangular ring shaped,triangular ring shaped, or some other closed path shape.

Also illustrated by FIG. 3A, the spiral structure 234 extendscontinuously over the isolation structure 206. In some embodiments, afirst end of the spiral structure 234 is electrically coupled to thefirst and second peripheral contact regions 208A, 208B and/or ground. Insome embodiments, a second end of the spiral structure, opposite thefirst end, is electrically coupled to the high side contact region 222and/or the HVJT drift contact region 224.

With reference to FIG. 3B, a top layout 300B of some more detailedembodiments of the IC of FIG. 1 is provided. FIG. 3B is a variant ofFIG. 3A in which the isolation structure 206, the gate electrode 120,the various field plates (e.g., the first HVJT field plate 226), and thespiral structure 234 have been removed to show underlying structure.

As illustrated by FIG. 3B, the peripheral well 204 completely surroundsthe HVJT drift well 218, and is completely spaced from the HVMOS bodywells 112 by the HVMOS drift wells 110. Absent such spacing, the HVMOSbody wells 112 would be at the same voltage as the peripheral well 204,which may be undesirable for certain applications of the first andsecond HVMOS devices 102A, 102B. Also illustrated by FIG. 3B, the HVJTdrift well 218 is ring shaped, and conforms to the isolation rings 124of the first and second HVMOS devices 102A, 102B. As should beappreciated, while the HVJT drift well 218 may be circular ring shaped,the HVJT drift well 218 is not limited to circular ring shaped and maybe square ring shaped, rectangular ring shaped, triangular ring shaped,or some other closed path shape.

The isolation ring 124 facilitates the integration of the first andsecond HVMOS devices 102A, 102B with the HVJT device 104 by allowing thefirst and second HVMOS devices 102A, 102B to be sandwiched between theHVJT drift well 218 and the peripheral well 204 without breaking acontinuity of the HVJT drift well 218 and the peripheral well 204. Asdescribed above, the HVJT device 104 is or comprises a diode, and theHVJT drift well 218 and the peripheral well 204 define a PN junction ofthe diode. Such integration leads to low IC chip area (e.g., a 25-60%reduction in IC chip area), high reliability, and simplified designiterations. For example, because of the integration, the first HVMOSdevice 102A is not remote from the HVJT device 104 and IC chip area islow. As another example, because of the integration, the first HVMOSdevice 102A may be electrically coupled to the HVJT device 104 locallyand without the use of remote wire bonding or complex interconnectstructures. This, in turn, increases the reliability of the IC andreduces manufacturing costs.

As noted above, the isolation rings 124 may define diodes that operatein the blocking or reversed biased state to provide electricalseparation between the HVJT device 104 and the first and second HVMOSdevices 102A, 102B. The isolation rings 124 define ring-shaped PNjunctions with the HVMOS drift wells 110. These ring-shaped PN junctionsrespectively surround the first and second HVMOS devices 102A, 102B and,where the HVMOS drift wells 110 are n-type, may prevent current fromflowing from the first and second HVMOS devices 102A, 102B to the HVJTdevice 104. The isolation rings 124 (and a remainder of the peripheralwell 204) define a ring-shaped PN junction with the HVJT drift well 218.This ring-shaped PN junction defines the HVJT device 104 and, where theHVMOS drift well 110 is n-type, may prevent current from flowing fromthe HVJT device 104 to the first and second HVMOS devices 102A, 102B. Insome embodiments, the isolation rings 124 define NPN junctions with theHVJT drift well 218 the HVMOS drift wells 110.

With reference to FIGS. 4A and 4B, top layouts 400A, 400B of variousother embodiments of the IC of FIG. 1 are provided in which a geometryof a high side area 106 is scaled in the X dimension and/or the Ydimension to vary the size of the high side area 106. For example, thegeometry of the high side area 106 may be scaled to accommodate more orless devices. Because the isolation rings 124 facilitate efficientintegration between the HVJT device 104 and the HVMOS devices 102, thegeometry of the high side area 106 may be readily scaled without complexredesigns.

With reference to FIGS. 5A-5D, top layouts 500A-500D of various otherembodiments of the IC of FIG. 1 are provided in which geometries of theHVMOS devices 102 are varied according to current handling requirementsand voltage handling requirements.

As illustrated by FIGS. 5A and 5B, the HVMOS devices 102 of FIG. 5A havea first width W1, whereas the HVMOS devices 102 of FIG. 5B have a secondwidth W2 less than the first width W1. Increasing a width of the HVMOSdevices 102 increases a width of the first and second source/drainregions 114, 116, which widens selectively-conductive channels of theHVMOS devices 102 and widens the HVMOS drift wells 110. This increasesthe source-drain current at which the HVMOS device 102 can sustainoperation. Further, decreasing a width of the HVMOS devices 102decreases a width of the first and second source/drain regions 114, 116,which narrows selectively-conductive channels of the HVMOS devices 102and narrows the HVMOS drift wells 110. This decreases the source-draincurrent at which the HVMOS devices 102 can sustain operation. Therefore,because the first width W1 is greater than the second width W2, theHVMOS devices 102 of FIG. 5A can sustain operation at a highersource-drain current than the HVMOS devices 102 of FIG. 5B.

As illustrated by FIG. 5C, the first and second HVMOS devices 102A, 102Brespectively have a third width W3 and a fourth width W4, where thefourth width W4 is less than the third width W3. Therefore, the firstHVMOS device 102A of FIG. 5C can sustain operation at a highersource-drain current than the second HVMOS device 102B of FIG. 5C.

As illustrated by FIGS. 5A-5D, the HVMOS devices 102 of FIGS. 5A-5C andthe HVJT device 104 of FIGS. 5A-5C have a first thickness T1, whereasthe HVMOS devices 102 of FIG. 5D and the HVJT device 104 of FIG. 5D havea second thickness T2 greater than the first thickness T1. Increasing athickness of the HVMOS devices 102 lengthens the HVMOS drift wells 110of the HVMOS devices 102, which increases the voltages at which theHVMOS devices 102 can sustain operation. Similarly, increasing athickness of the HVJT device 104 lengthens the HVJT drift well (notshown), which increases the voltage at which the HVJT device 104 cansustain operation. Decreasing a thickness of an HVMOS devices 102shortens the HVMOS drift wells 110, which decreases the voltages atwhich the HVMOS devices 102 can sustain operation. Similarly, decreasinga thickness of the HVJT device 104 shortens the HVJT drift well, whichdecreases the voltage at which the HVJT device 104 can sustainoperation. Therefore, since the first thickness T1 is less than thesecond thickness T2, the HVMOS devices 102 of FIG. 5D can sustainoperation at higher voltages than the HVMOS devices 102 of the FIGS.5A-5C. Further, the HVJT device 104 of FIG. 5D can sustain operation ata higher voltage than the HVJT device 104 of FIGS. 5A-5C.

Because the isolation rings 124 facilitate efficient integration betweenthe HVJT device 104 and the HVMOS devices 102, the geometries of theHVMOS devices 102 and the HVJT device 104 may be readily scaled withoutcomplex redesigns by adjusting the size of the isolation rings 124.

With reference to FIGS. 6A and 6B, top layouts 600A, 600B of variousother embodiments of the IC of FIG. 1 are provided in which more thantwo HVMOS devices are integrated with the HVJT device 104. Asillustrated by FIG. 6A, the HVMOS devices 102 further comprise a thirdHVMOS device 102C. As illustrated by FIG. 6B, the HVMOS devices 102further comprise the third HVMOS device 102C and a fourth HVMOS device102D. Each of the HVMOS devices 102 is as described in FIG. 1 and may,for example, be as the first HVMOS device 102A is illustrated anddescribed in any one of FIGS. 2A, 2B, 3A, and 3B.

Because the isolation rings 124 facilitate efficient integration betweenthe HVJT device 104 and the HVMOS devices 102, the number of HVMOSdevices integrated with the HVJT device 104 may be varied withoutcomplex redesigns. Further, because the HVJT device 104 and the HVMOSdevices 102 are integrated together, the number of HVMOS devicesintegrated with the HVJT device 104 may be increased without increasingIC chip area.

With reference to FIG. 7, a block diagram 700 of some embodiments of acircuit in which the IC of FIG. 1 finds application. The circuit may,for example, be or comprise a high-side gate driver circuit. Asillustrated, a level shifter 702 comprises the first HVMOS device 102Aand the second HVMOS device 102B, and further comprises a first resistor704A and a second resistor 704B. In some embodiments, the first andsecond HVMOS devices 102A, 102B are n-channel LDMOS transistors. Thefirst HVMOS device 102A and the first resistor 704A are electricallycoupled in series from a high side supply node 706 (e.g., HS_Vdd) to alow voltage return node 708 (e.g., LV_Vss), such that the first HVMOSdevice 102A is separated from the high side supply node 706 by the firstresistor 704A. Similarly, the second HVMOS device 102B and the secondresistor 704B are electrically coupled in series from the high sidesupply node 706 to the low voltage return node 708, such that the secondHVMOS device 102B is separated from the high side supply node 706 by thesecond resistor 704B. In some embodiments, the low voltage return node708 is electrically coupled to ground 710.

An edge pulse generator 712 is powered by a low voltage power supply714, and controls gates of the first and second HVMOS devices 102A, 102Bbased on a high side input signal 716. The high side input signal 716 isa binary signal varying between 0 volts and a voltage of the low voltagepower supply 714. The low voltage power supply 714 has an anodeelectrically coupled to a low voltage supply node 718 (e.g., LV_V_(dd)),and a cathode electrically coupled to the low voltage return node 708.The low voltage power supply 714 may be, for example, a direct current(DC) power supply, and/or may, for example, supply a low voltage betweenabout 1-20 volts, between about 1-10 volts, between about 10-20 volts,or less than about 20 volts. The edge pulse generator 712 detects risingedges of the high side input signal 716, and further detects fallingedges of the high side input signal 716. Further, the edge pulsegenerator 712 generates a rising-edge signal 720A and a falling-edgesignal 720B. The rising-edge signal 720A has a pulse at each of thedetected rising edges and gates the first HVMOS device 102A. Thefalling-edge signal 710B has a pulse at each of the detected fallingedges and gates the second HVMOS device 102B.

A set-reset (S-R) latch 722 is set by a set signal 724A at a shared nodeof the first HVMOS device 102A and the first resistor 704A, and isfurther reset by a reset signal 724B at a shared node of the secondHVMOS device 102B and the second resistor 704B. In some embodiments, theset and reset signals 724A, 724B pass through a noise filter (not shown)before passing to the S-R latch 722. An inverted output (e.g., Q) of theS-R latch 722 controls a gate driver 726 to selectively switch the gatedriver 726 between an ON state and an OFF state. For example, the gatedriver 726 may be in an ON state when the inverted output of the S-Rlatch 722 indicates a binary “0” and may be in an OFF state when theinverted output of the S-R latch 722 indicates a binary “1”. In someembodiments, the gate driver 726 is or comprises a complementarymetal-oxide-semiconductor (CMOS) inverter. In some embodiments, the gatedriver 726 comprises a p-channel MOS field-effect transistor (MOSFET)728P and an n-channel MOSFET 728N connected in series from the high sidesupply node 706 to a high side return (e.g., HS_V_(ss)) node 730, suchthat the p-channel MOSFET 728P separates the n-channel MOSFET 728N fromthe high side supply node 706.

The HVJT device 104 and the first and second HVMOS devices 102A, 102Bcollectively define a composite structure extending laterally along aboundary of a high side area 106 of an IC die 732 to surround the highside area 106. In some embodiments, the composite structure is squarering shaped, rectangular ring shaped, triangular ring shaped, circularring shaped, or some other closed path shape. Further, the compositestructure is surrounded by a low voltage area 108 of the IC die 732. Thehigh side area 106 accommodates the S-R latch 722, the gate driver 726,the first resistor 704A, and the second resistor 704B, whereas the lowvoltage area 108 accommodates the edge pulse generator 712. The HVJTdevice 104 is or comprises a diode 104 d and electrically separates thelow voltage area 108 from the high side area 106. In some embodiments, acathode of the diode 104 d is electrically coupled to the high sidesupply node 706, and/or an anode of the diode 104 d is electricallycoupled to the low voltage return node 708.

A bootstrap capacitor 734 is electrically coupled from the high sidesupply node 706 to the high side return node 730. The bootstrapcapacitor 734 is charged by the low voltage power supply 714, through abootstrap diode 736, while the gate driver 726 is in the OFF state.Further, the bootstrap capacitor 734 powers devices (e.g., the S-R latch722) at the high side area 106 to change the gate driver 726 to the ONstate. A high side power supply 738 is electrically coupled to the lowvoltage return node 708, and is selectively electrically coupled to thehigh side return node 730 by a first power MOSFET 740. Note that aninsulated-gate bipolar transistor (IGBT) or some other switching devicemay alternatively be used in place of the first power MOSFET 740. Thehigh side power supply 738 may be, for example, a DC power supply,and/or may, for example, supply a high voltage between about 300-1200volts, between about 300-750 volts, between about 750-1200 volts,between about 550-650 volts, or in excess of 300 volts. The first powerMOSFET 740 is gated by an output of the gate driver 726 and may be, forexample, an n-channel power MOSFET. In some embodiments, the output ofthe gate driver 726 is at a node shared by the p-channel MOSFET 728P andthe n-channel MOSFET 728N.

The bootstrap diode 736 limits the flow of current between the lowvoltage supply node 714 and the high side supply node 706. The bootstrapdiode 736 allows current to flow from the low voltage supply node 718 tothe high side supply node 706 while the high side supply node 706 is ata lower voltage level than the low voltage supply node 718. This mayoccur while the gate driver 726 is in the OFF state and allows thebootstrap capacitor 734 to be charged. Further, the bootstrap diode 736blocks current from flowing between the low voltage supply node 718 andthe high side supply node 706 while the high side supply node 706 is ata higher voltage level than the low voltage supply node 718. This mayoccur while the gate driver 726 is in the ON state and prevents devicesat the low voltage area 108 from being damaged by high voltages of thehigh side power supply 738.

In operation, to disable the first power MOSFET 740, the high side inputsignal 716 is changed from a binary “1” to a binary “0”, therebyresetting the S-R latch 722. After resetting the S-R latch 722, the S-Rlatch 722 outputs a binary “1” at the inverted output, which disablesthe p-channel MOSFET 728P and enables the n-channel MOSFET 728N. Thiselectrically shorts the gate of the first power MOSFET 740 and thesource of the first power MOSFET 740, thereby disabling the first powerMOSFET 740. Additionally, the high side return node 730 is electricallycoupled to the low voltage return node 708. In some embodiments, thiselectrical coupling is performed by a second power MOSFET 742 or someother switching device. The second power MOSFET 742 is gated by alow-side input signal 744, which may, for example, be generated by alow-side gate driver circuit. Since the bootstrap capacitor 734 haslargely been discharged and the high side return node 730 iselectrically coupled to the low voltage return node 708, the voltage atthe high side supply node 706 is low compared to the voltage of the lowvoltage supply node 718. Therefore, the bootstrap diode 736 is operatingin a forward biased state and allows the flow of current between the lowvoltage supply node 718 and the high side supply node 706. This, inturn, charges the bootstrap capacitor 734 from the low voltage powersupply 714.

To enable the first power MOSFET 740, the high side return node 730 iselectrically separated from the low voltage return node 708, such thatthe high side return node 730 is floating. In some embodiments, thiselectrical separation is performed by the second power MOSFET 742. Thehigh side return node 730 floats upward, whereby the bootstrap diode 736moves to a reverse biased state. Further, the high side input signal 716is changed from a binary “0” to a binary “1”. This change sets the S-Rlatch 722, such that the inverted output of the S-R latch 722 is at abinary “0”. The inverted output enables the p-channel MOSFET 728P andenables the n-channel MOSFET 728N, which electrically couples thebootstrap capacitor 734 from the gate of the first power MOSFET 740 tothe source of the first power MOSFET 740. Charge accumulated in thebootstrap capacitor 734 enables the first power MOSFET 740, whichelectrically couples the high side power supply 738 to the high sidereturn node 730. This changes a voltage at the high side supply node 706to the voltage of the high side power supply 738 plus the voltage acrossthe bootstrap capacitor 734.

With reference to FIGS. 8-13, a series of cross-sectional views 800-1300of some embodiments of a method for forming an IC in which a HVMOSdevice is integrated with a HVJT device is provided. The IC may, forexample, be as illustrated and described with respect to FIGS. 1, 2A,2B, 3A, and 3B, and/or the cross-sectional views 800-1300 may, forexample, be taken along line A-A′ in FIGS. 1, 3A, and 3B.

As illustrated by the cross-sectional view 800 of FIG. 8, a series ofdoping processes are performed to form a high side well 220, aperipheral well 204, an HVJT drift well 218, an HVMOS drift well 110,and an HVMOS body well 112 in a semiconductor substrate 202. Thesemiconductor substrate 202 may be, for example, a bulk siliconsubstrate, a group III-V substrate, a SOI substrate, or some othersemiconductor substrate.

The peripheral well 204 overlies a bulk semiconductor region 202B of thesemiconductor substrate 202, and comprises a pair of segments betweenwhich the high side well 220, the HVJT drift well 218, the HVMOS driftwell 110, and the HVMOS body well 112 are sandwiched. Further, theperipheral well 204 comprises an isolation ring 124 and a protrusion204P. The isolation ring 124 provides electrical and physical separationbetween the HVJT drift well 218 and the HVMOS drift well 110. Whenviewed top down, the isolation ring 124 may be square ring shaped,rectangular ring shaped, triangular ring shaped, circular ring shaped,or some other closed path shape. The protrusion 204P protrudes laterallyinto the HVJT drift well 218, towards the high side well 220, therebyleading to an HVJT RESURF structure 232. The HVJT RESURF structure 232enables the HVJT device under manufacture to sustain operation at highvoltages. In some embodiments, the peripheral well 204 and the bulksemiconductor region 202B have the same doping type, such as, forexample, p-type. In some embodiments, the peripheral well 204 iscontinuous. For example, the various segments of the peripheral well 204may be connected outside the cross-sectional view 800 of FIG. 8. See,for example, FIG. 3B.

The HVJT drift well 218 underlies and laterally surrounds the high sidewell 220 to completely separate the high side well 220 from theperipheral well 204 and the bulk semiconductor region 202B. The HVJTdrift well 218 and the peripheral well 204 have opposite doping typesand partially define the HVJT device under manufacture. Namely, the HVJTdevice under manufacture is or comprises a diode, and the HVJT driftwell 218 and the peripheral well 204 define a PN junction of the diode.In some embodiments, the HVJT drift well also has an opposite dopingtype as the high side well 220, and/or has the same doping type as theHVMOS drift well 110.

The HVMOS drift well 110 underlies and laterally surrounds the HVMOSbody well 112 to completely separate the HVMOS body well 112 from theperipheral well 204 and the bulk semiconductor region 202B. The HVMOSdrift well 110 has an opposite doping type as the peripheral well 204and the HVMOS body well 112. Further, in some embodiments, the HVMOSdrift well 110 has the same doping type as the HVJT drift well 218. TheHVMOS drift well 110 and the HVMOS body well 112 support the HVMOSdevice under manufacture. The HVMOS body well 112 comprises a protrusion112P protruding laterally into the HVMOS drift well 110, towards thehigh side well 220, thereby leading to an HVMOS RESURF structure 216.The HVMOS RESURF structure 216 enables the HVMOS device undermanufacture to sustain operation at high voltages.

The doping processes of FIG. 8 may, for example, be performed by ionimplantation and/or some other doping processes. In some embodiments,the doping processes comprise n-type doping processes and p-type dopingprocesses. The n-type doping processes are performed to form n-typewells, and the p-type doping processes are performed to form p-typewells. The p-type wells may, for example, include the peripheral well204, the high side well 220, and the HVMOS body well 112, and the n-typewells may, for example, include the HVJT drift well 218 and the HVMOSdrift well 110, or vice versa. In some embodiments, some or all of then-type and p-type doping processes is/are each performed by forming amask with a pattern over the semiconductor substrate 202, performing ionimplantation into the semiconductor substrate 202 with the mask inplace, and removing the mask. The mask may, for example, have a patternof the one or more wells being formed by the ion implantation, and may,for example, be photoresist, silicon nitride, or some other material.

As illustrated by the cross-sectional view 900 of FIG. 9, an isolationstructure 206 is formed over the semiconductor substrate 202,demarcating boundaries for doped regions (e.g., contact regions and/orsource/drain regions) to be formed hereafter. The isolation structure206 comprises a dielectric material (e.g., silicon oxide), and may be orcomprise, for example, a STI structure, a FOX structure, a LOCOSstructure, or some other isolation structure.

Overlying the high side well 220, the isolation structure 206 defines ahigh side opening 902. The high side opening 902 is on opposite sides ofthe high side well 220 and may, for example, have a ring-shaped toplayout. Overlying a boundary at which the peripheral well 204 contactsthe HVJT drift well 218, the isolation structure 206 defines a low-sideHVJT opening 904. Overlying the HVJT drift well 218 and adjacent to thehigh side well 220, the isolation structure 206 defines a high-side HVJTopening 906. The high-side HVJT opening 906 is on opposite sides of thehigh side well 220 and may, for example, have a ring-shaped top layout.As used herein with respect to the high side opening 902 and thehigh-side HVJT opening 906, ring-shaped may be circular ring shaped,square ring shaped, rectangular ring shaped, triangular ring shaped, orsome other closed path shape. Overlying a boundary at which the HVMOSbody well 112 contacts the HVMOS drift well 110, the isolation structure206 defines a low-side HVMOS opening 908. Overlying the HVMOS drift well110 and adjacent to the isolation ring 124, the isolation structure 206defines a high-side HVMOS opening 910. Overlying the peripheral well 204and adjacent to the HVMOS drift well 110, the isolation structure 206defines a peripheral opening 912.

In some embodiments, a process for forming the isolation structure 206comprises forming a mask (not shown) covering the semiconductorsubstrate 202 and having a layout of the isolation structure 206. Themask may, for example, be silicon nitride, photoresist, or some othersuitable mask material. An oxidation process is then performed with maskin place to form the isolation structure 206, and the mask issubsequently removed.

As illustrated by the cross-sectional view 1000 of FIG. 10, a dielectriclayer 1002 and a conductive layer 1004 are formed stacked over thesemiconductor substrate 202 and the isolation structure 206. Thedielectric layer 1002 may be or comprise, for example, silicon oxide,hafnium oxide, or some other dielectric, and/or the conductive layer1004 may be or comprise, for example, doped polysilicon, metal, or someother conductive material. In some embodiments, the dielectric layer1002 is formed by thermal oxidation, chemical vapor deposition (CVD),physical vapor deposition (PVD), some other deposition or oxidationprocess, or any combination of the foregoing. In some embodiments, theconductive layer 1004 is formed by CVD, PVD, electroless plating,electroplating, some other deposition or plating process, or anycombination of the foregoing.

As illustrated by the cross-sectional view 1100 of FIG. 11, thedielectric layer 1002 (see FIG. 10) and the conductive layer 1004 (seeFIG. 10) are patterned. Overlying the HVMOS drift well 110, thepatterning forms a gate electrode 120 and a gate dielectric layer 212stacked in the low-side HVMOS opening 908 and lining a sidewall of theisolation structure 206. Further, the patterning forms an HVMOS fieldplate 214 in the high-side HVMOS opening 910 and lining a sidewall ofthe isolation structure 206. Overlying the HVJT drift well 218, thepatterning forms a first HVJT field plate 226 and a field platedielectric layer 228 stacked in the low-side HVJT opening 904 and lininga sidewall of the isolation structure 206. Further, the patterning formsa second HVJT field plate 230 in the high-side HVJT opening 906 andlining a sidewall of the isolation structure 206.

In some embodiments, a process for performing the patterning comprisesforming a mask overlying the conductive layer 1004, and subsequentlyperforming an etch into the conductive layer 1004 and the dielectriclayer 1002 with the mask in place. The mask is thereafter be removed andmay, for example, be or comprise photoresist, silicon nitride, someother mask material, or any combination of the foregoing.

In some embodiments, the patterning of the conductive layer 1004 alsoforms a spiral structure 234 overlying both the HVMOS drift well 110 andthe HVMOS drift well 218. In other embodiments, the spiral structure 234is formed independent of the conductive layer 1004 and/or the patterningof the conductive layer 1004. For example, a second conductive layer(not shown) may be formed and subsequently patterned into the spiralstructure 234. The second conductive layer may, for example, be adifferent material than the conductive layer 1004 and/or may, forexample, be metal, doped polysilicon, or some other conductive material.Further, the second conductive layer may, for example, be formed by CVD,PVD, electroless plating, electroplating, some other deposition orplating process, or any combination of the foregoing. The patterning ofthe second conductive layer may, for example, be performed byphotolithography and/or as the patterning of the conductive layer 1004is described above.

As illustrated by the cross-sectional view 1200 of FIG. 12, a series ofdoping processes is performed to form contact regions and source/drainregions in the semiconductor substrate 202. A first peripheral contactregion 208A is formed overlying the peripheral well 204, through theperipheral opening 912. The first peripheral contact region 208A has thesame doping type as, but a higher doping concentration than, theperipheral well 204. A high side contact region 222 is formed overlyingthe high side well 220, through the high side opening 902. The high sidecontact region 222 has the same doping type as, but a higher dopingconcentration than, the high side well 220.

A first source/drain region 114 and a body contact region 118 are formedoverlying the HVMOS body well 112, through the low-side HVMOS opening908. A second source/drain region 116 is formed overlying the HVMOSdrift well 110, through the high-side HVMOS opening 910. The first andsecond source/drain regions 114, 116, the body contact region 118, thegate electrode 120, and the HVMOS field plate 214 at least partiallydefine an HVMOS device 102A on the HVMOS body well 112 and the HVMOSdrift well 110.

A second peripheral contact region 208B is formed overlying theperipheral well 204, through the low-side HVJT opening 904. A HVJT driftcontact region 224 is formed overlying the HVJT drift well 218, throughthe high-side HVJT opening 906. The peripheral well 204, the HVJT driftwell 218, the first and second HVJT field plates 226, 228, the secondperipheral contact region 208B, and the HVJT drift contact region 224 atleast partially define an HVJT device 104. In some embodiments, thespiral structure 234 overlies both the HVJT device 104 and the HVMOSdevice 102 and serves as a field plate for both of the HVJT device 104and the HVMOS device 102.

The doping processes of FIG. 12 may, for example, be performed by ionimplantation and/or some other doping processes. In some embodiments,the doping processes comprise an n-type doping process and a p-typedoping process. In some embodiments, each of the doping processes isperformed by forming a mask with a pattern over the semiconductorsubstrate 202, performing ion implantation into the semiconductorsubstrate 202 with the mask in place, and removing the mask. The maskmay, for example, have a pattern of the one or more contact and/orsource/drain regions being formed by the ion implantation, and may, forexample, be photoresist, silicon nitride, or some other material.

As illustrated by the cross-sectional view 1300 of FIG. 13, aback-end-of-line (BEOL) metallization process is performed to form aplurality of conductive wires 236 and a plurality of conductive vias 238stacked over the semiconductor substrate 202. For ease of illustration,only some of the conductive wires 236 are labeled 236, and only some ofthe conductive vias 238 are labeled 238. The conductive wires 236 andthe conducive vias 238 define conductive paths interconnecting the firstand second source/drain regions 114, 116, the various contact regions(e.g., the high side contact region 222), the various field plates(e.g., the second HVJT field plate 230), the gate electrode 120, and thespiral structure 234. The conductive wires 236 and the conductive vias238 may be or comprise, for example, copper, aluminum copper, aluminum,tungsten, some other conductive material, or any combination of theforegoing.

In some embodiments, the conductive vias 238 are formed by forming aninterlayer dielectric (ILD) layer (not shown) covering the structure ofFIG. 12, performing a planarization into a top surface of the ILD layer,and patterning the ILD layer to define via openings corresponding to theconductive vias 238. The ILD layer is covered with a conductive layer(not shown) and the via openings are filled with the conductive layer. Aplanarization is performed into a top surface of the conductive layeruntil the top surface of the conductive layer is about even with the topsurface of the ILD layer, thereby forming the conductive vias 238 fromthe conductive layer. The above described process for forming theconductive vias 238 is then repeated for the conductive wires 236.

With reference to FIG. 14, a flowchart 1400 of some embodiments of themethod of FIGS. 8-13 is provided.

At step 1402, a series of doping processes are performed to form a highside well, a HVJT drift well surrounding the high side well, a HVMOSbody well, a HVMOS drift well surrounding the HVMOS body well, and aperipheral well surrounding the HVJT drift well and the HVMOS driftwell, where the HVJT and HVMOS drift wells border in a ring-shapedpattern, and where the peripheral well comprises an isolation ringseparating the HVMOS drift well from the HVJT drift well. See, forexample, FIG. 8.

At step 1404, an isolation structure is formed over the semiconductorsubstrate, demarcating boundaries for doped regions to be formedhereafter. See, for example, FIG. 9. The doped regions include, forexample, contact regions and source/drain regions.

At step 1406, a dielectric layer and a conductive layer are deposited onthe semiconductor substrate and the isolation structure. See, forexample, FIG. 10.

At step 1408, the dielectric layer and the conductive layer arepatterned into a gate electrode, field plates, and a spiral structure,wherein the gate electrode overlies a PN junction between the HVMOS bodyand drift wells, and where the spiral structure is shared by HVMOS andHVJT devices under manufacture. See, for example, FIG. 11.

At step 1410, a series of doping processes is performed to formsource/drain regions and contact regions, where the source/drain regionsand a body contact region are formed on the HVMOS body well and theHVMOS drift well, and where a peripheral contact region and a HVJT driftcontact region are respectively formed on the peripheral well and theHVJT drift well. See, for example, FIG. 12. The source/drain regions,the body contact region and the gate electrode at least partially definean HVMOS device on the HVMOS drift well and the HVMOS body well. Theperipheral contact region, the HVJT drift contact region, the HVJT driftwell, and the peripheral well at least partially define an HVJT device.

At step 1412, a BEOL metallization process is performed to form aplurality of conductive wires and a plurality of conductive viasinterconnecting the source/drain regions, the contact regions, the gateelectrodes, the field plates, and the spiral structure. See, forexample, FIG. 13.

While the flowchart 1400 of FIG. 14 is illustrated and described hereinas a series of acts or events, it will be appreciated that theillustrated ordering of such acts or events is not to be interpreted ina limiting sense. For example, some acts may occur in different ordersand/or concurrently with other acts or events apart from thoseillustrated and/or described herein. Further, not all illustrated actsmay be required to implement one or more aspects or embodiments of thedescription herein, and one or more of the acts depicted herein may becarried out in one or more separate acts and/or phases.

In some embodiments, the present application provides an integratedcircuit including: a substrate; a first drift well and a second driftwell in the substrate, wherein the first and second drift wells borderin a ring-shaped pattern and have a first doping type; a peripheral wellin the substrate and having a second doping type, wherein the peripheralwell surrounds and separates the first and second drift wells, andwherein the second doping type is opposite the first doping type; a bodywell in the substrate and having the second doping type, wherein thebody well overlies the first drift well and is spaced from theperipheral well by the first drift well; and a gate electrode overlyinga junction between the first drift well and the body well. In someembodiments, the integrated circuit further includes a high side well inthe substrate and having the second doping type, wherein the high sidewell overlies the second drift well and is spaced from the peripheralwell by the second drift well. In some embodiments, the integratedcircuit further includes a high side contact region overlying the highside well, wherein the high side contact region extends laterally alonga periphery of the high side well in a closed path, and wherein the highside contact region has the same doping type as, but a higher dopingconcentration than, the high side well. In some embodiments, theintegrated circuit further includes a drift contact region overlying thesecond drift well, wherein the drift extends laterally along a peripheryof the high side well in a closed path to completely enclose the highside well, wherein the drift contact region has the same doping type as,but a higher doping concentration than, the second drift well, andwherein the drift contact region separates the high side well from thefirst drift well. In some embodiments, the substrate includes a bulksemiconductor region having the second doping type, wherein the firstand second drift wells and the peripheral well overlie the bulksemiconductor region. In some embodiments, the integrated circuitfurther includes a first source/drain region and a second source/drainregion, wherein the first and second source/drain regions respectivelyoverlie the body well and the first drift well, and wherein the firstand second source/drain regions are separated by the body well and thefirst drift well. In some embodiments, the integrated circuit the bodywell protrudes laterally into the first drift well towards the seconddrift well, such that the substrate has an alternating stack of p-typeand n-type regions defining a RESURF structure. In some embodiments, theperipheral well protrudes laterally into the second drift well towardsthe first drift well, such that the substrate has an alternating stackof p-type and n-type regions defining a RESURF structure. In someembodiments, the integrated circuit further includes a spiral structureoverlying both the first and second drift wells, wherein the spiralstructure is conductive and has a continuous, spiral-shaped top layout.In some embodiments, the integrated circuit further includes: a diodeincluding a PN junction defined by the peripheral well and the seconddrift well; and a LDMOS device on the body well and the first driftwell, wherein the LDMOS device includes the gate electrode.

In some embodiments, the present application provides another integratedcircuit including: a semiconductor substrate; a drift well in thesemiconductor substrate, wherein the drift well has a first doping typeand has a ring-shaped top layout; a high side well in the semiconductorsubstrate and having a second doping type opposite the first dopingtype, wherein the high side well overlies the drift well and issurrounded by the drift well; a switching device on the semiconductorsubstrate, at an indent in the drift well, wherein the drift wellseparates the switching device from the high side well; and a peripheralwell in the semiconductor substrate and having the second doping type,wherein the peripheral well surrounds the drift well and the switchingdevice, and wherein the peripheral well separates the switching devicefrom the drift well. In some embodiments, the integrated circuit furtherincludes: a second drift well in the semiconductor substrate, whereinthe second drift well borders the drift well and has the first dopingtype; and a body well in the semiconductor substrate and having thesecond doping type, wherein the body well overlies the second drift welland is spaced from the peripheral well by the second drift well, andwherein the switching device is on the second drift well and the bodywell. In some embodiments, the integrated circuit further includes: ahigh side contact region overlying the high side well; and a driftcontact region overlying the drift well, wherein the drift contactregion extends along a periphery of the high side well in a closed pathto enclose the high side well and the high side contact region, andwherein the high side contact region and the drift contact region havering-shaped top layouts and respectively have opposite doping types. Insome embodiments, the high side well has an indentation adjacent to theswitching device, and wherein the high side contact region and the driftcontact region conform to the indent. In some embodiments, theintegrated circuit further includes: a second drift well bordering thedrift well in the semiconductor substrate and having the first dopingtype; a body well in the semiconductor substrate and having the seconddoping type, wherein the body well overlies the second drift well and iscompletely spaced from the peripheral well by the second drift well; anda gate electrode overlying an NP junction at which the second drift welland the body well directly contact, wherein the second drift well, thebody well, and the gate electrode are independent of the switchingdevice. In some embodiments, the drift well directly contacts theperipheral well at a PN junction, and wherein the PN junction has acontinuous, ring-shaped top layout. In some embodiments, the peripheralwell protrudes into the drift well towards the high side well, such thatthe semiconductor substrate has an alternating stack of p-type andn-type regions defining a RESURF structure. In some embodiments, theintegrated circuit further includes a spiral structure overlying boththe drift well and the switching device, wherein the spiral structure isconductive and has a continuous, spiral-shaped top layout thatcompletely encloses the high side well.

In some embodiments, the present application provides a method formanufacturing an integrated circuit, the method including: performing aseries of doping processes into a substrate to form: a first drift welland a second drift well bordering and having a first doping type,wherein the second drift well has a ring-shaped top layout, and whereinthe first drift well is at an indent in the ring-shaped top layout; aperipheral well having a second doping type opposite the first dopingtype, wherein the peripheral well surrounds and separates the first andsecond drift wells; and a body well having the second doping type,wherein the body well overlies the first drift well and is spaced fromthe peripheral well by the first drift well; forming an isolationstructure overlying the first and second drift wells; and forming a gateelectrode overlying a junction between the first drift well and the bodywell, and extending from the junction, along a sidewall of the isolationstructure, to a top surface of the isolation structure. In someembodiments, the method further includes: depositing a conductive layerover the substrate and the isolation structure; and patterning theconductive layer to form the gate electrode, and to further form aspiral structure overlying the first and second drift wells on the topsurface of the isolations structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. An integrated circuit (IC) comprising: asubstrate; a first switching device well and a termination device wellbordering in the substrate and having a first doping type; a firstswitching device overlying the first switching device well, wherein thefirst switching device comprises a body well and a gate electrode,wherein the body well has a second doping type opposite the first dopingtype and is recessed into a top of the first switching device well, andwherein the body well directly contacts the first switching device wellat a PN junction underlying the gate electrode; a peripheral well in thesubstrate and having the second doping type, wherein the peripheral wellhas a first sidewall boundary directly contacting the first switchingdevice well continuously in a first closed path and further has a secondsidewall boundary directly contacting the termination device wellcontinuously in a second closed path, and wherein the first sidewallboundary is spaced from the body well; a dielectric structure sunkeninto the substrate; a first field plate overlying the second sidewallboundary and on a first sidewall of the dielectric structure; a spiralstructure overlying the first switching device well and the terminationdevice well on the dielectric structure, wherein the dielectricstructure extends directly from the first field plate to the spiralstructure; a high side well overlying the termination device well in thesubstrate and having the second doping type, wherein the high side wellhas a first sidewall boundary that directly contacts the terminationdevice well continuously in a third closed path surrounded by the secondclosed path, but not the first closed path; a second field plate on asecond sidewall of the dielectric structure, wherein the dielectricstructure extends continuously and linearly from the second field plateto the spiral structure; and a contact region extending laterally andcontinuously along a boundary of the high side well in a fourth closedpath, wherein the contact region is spaced from the high side well andborders the second field plate.
 2. The IC according to claim 1, whereinthe first field plate is on multiple sides of the high side well.
 3. TheIC according to claim 1, wherein the spiral structure extends laterallyin a spiral shaped path that crosses the second closed path at the firstswitching device, and wherein the spiral shaped path is laterally spacedfrom the second closed path along a majority of the spiral shaped path.4. The IC according to claim 1, further comprising: a second switchingdevice well bordering the termination device well in the substrate andhaving the first doping type; and a second switching device overlyingthe second switching device well; wherein the peripheral well has athird sidewall boundary directly contacting the second switching devicewell continuously in a fifth closed path, and wherein the first fieldplate extends laterally along the second sidewall boundary beginningproximate the first switching device and ending proximate the secondswitching device.
 5. The IC according to claim 1, further comprising: ahigh side contact region sunken into a top of the high side well;wherein the contact region and the high side contact region respectivelyhave the first and second doping types, wherein the contact region andthe high side contact region border the first sidewall boundary of thehigh side well along an entirety of the third closed path, wherein thebody well has a first protrusion buried in the first switching devicewell, wherein the peripheral well has a second protrusion is buried inthe termination device well, wherein the first and second protrusionsprotrude towards each other, wherein a lateral separation between thefirst protrusion and the high side contact region is greater than alateral separation between the second protrusion and the high sidecontact region.
 6. The IC according to claim 1, wherein the first dopingtype is n-type, and wherein the second doping type is p-type.
 7. Anintegrated circuit (IC) comprising: a substrate; a termination devicewell in the substrate and having a first doping type; a high side welloverlying the termination device well in the substrate and having asecond doping type opposite the first doping type, wherein the high sidewell has a sidewall boundary directly contacting the termination devicewell continuously in a first closed path; a first switching device and asecond switching device in the substrate, respectively at a firstlateral recess and a second lateral recess in the high side well; aperipheral well in the substrate and having the second doping type,wherein the peripheral well separates and individually surrounds thefirst and second switching devices and the termination device well; atermination device contact region in the substrate, wherein thetermination device contact region is on the termination device well andhas the first doping type; and a first dielectric structure sunken intothe substrate, wherein the first dielectric structure overlies thesidewall boundary, and adjoins the termination device contact region,continuously along an entirety of the first closed path.
 8. The ICaccording to claim 7, further comprising: a high side contact region inthe substrate, wherein the high side contact region is on the high sidewell and has the second doping type, wherein the termination device andhigh side contact regions extend continuously in individual closed pathsalong the sidewall boundary to border the entirety of the sidewallboundary.
 9. The IC according to claim 7, wherein the first dielectricstructure overlies the sidewall boundary, and adjoins the terminationdevice contact region, continuously along a majority of the first closedpath, and wherein the high side well is completely spaced from theperipheral well.
 10. The IC according to claim 7, wherein the peripheralwell has a sidewall boundary directly contacting the termination devicewell continuously in a second closed path that surrounds the high sidewell and that wraps around a high side of the first switching device anda high side of the second switching device.
 11. The IC according toclaim 7, further comprising: a second dielectric structure sunken intothe substrate, wherein the second dielectric structure extends laterallyin a second closed path to surround the first dielectric structure;wherein the termination device contact region extends in a third closedpath around the first dielectric structure, wherein the terminationdevice contact region borders the first and second dielectricstructures, and separates the first and second dielectric structures,continuously along an entirety of the third closed path.
 12. The ICaccording to claim 11, further comprising: a spiral structure overlyingthe second dielectric structure and extending in a spiral shaped patharound the high side well.
 13. The IC according to claim 7, wherein thefirst switching device comprises a body well, a drift well, and a gateelectrode, wherein the drift and body wells are in the substrate andrespectively have the first and second doping types, and wherein thedrift and body wells directly contact at a PN junction underlying thegate electrode; wherein the peripheral well directly contacts the driftwell and is completely spaced from the body well.
 14. The IC accordingto claim 7, wherein the first doping type is n-type, and wherein thesecond doping type is p-type.
 15. An integrated circuit (IC) comprising:a substrate; a termination device well in the substrate and having afirst doping type; a first switching device bordering the terminationdevice well in the substrate and comprising a body well, a drift well,and a gate electrode, wherein the drift and body wells are in thesubstrate and respectively have the first doping type and a seconddoping type opposite the first doping type, and wherein the drift andbody wells directly contact at a PN junction underlying the gateelectrode; a high side well overlying the termination device well in thesubstrate and having the second doping type; a termination devicecontact region in the substrate and on the termination device well,wherein the termination device contact region has the first doping typeand extends laterally along a boundary of the high side well in a firstclosed path; a peripheral well in the substrate and having the seconddoping type, wherein the peripheral well has a first sidewall boundaryextending around the first switching device in a second closed path andfurther has a second sidewall boundary directly contacting thetermination device well in a third closed path, and wherein the firstsidewall boundary directly contacts the drift well and is completelyspaced from the body well; and a high side contact region overlying thehigh side well in the substrate and having the second doping type,wherein the high side contact region is ring shaped; wherein theperipheral well has a protrusion that is buried in the terminationdevice well and protrudes laterally to and terminates at a thirdsidewall boundary of the peripheral well directly under the terminationdevice contact region; wherein the protrusion has a first segment and asecond segment, wherein the first and second segments are respectivelyon opposite sides of the high side well and protrude towards each other,wherein the first segment is separated from the high side contact regionby a first distance, and wherein the second segment is separated fromthe high side contact region by a second distance that is the same asthe first distance.
 16. The IC according to claim 15, wherein the bodywell has a protrusion that is buried in the substrate and that protrudestowards the high side well.
 17. The IC according to claim 16, whereinthe protrusion of the body well and the protrusion of the peripheralwell have different lengths.
 18. The IC according to claim 15, furthercomprising: a dielectric structure recessed into a top of the substrate;a first field plate overlying the second sidewall boundary and on afirst sidewall of the dielectric structure; and a second field platebordering the termination device contact region on a second sidewall ofthe dielectric structure, wherein the dielectric structure extendscontinuously from the first field plate to the second field plate. 19.The IC according to claim 18, wherein the first and second field plateshave top layouts that are C shaped.
 20. The IC according to claim 15,wherein the first doping type is n-type, and wherein the second dopingtype is p-type.